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IRGBC30UD2
IRGBC30UD2 Transistors N-Channel IGBT V(BR)CES (V)600 V(BR)GES (V)20 I(C) Max. (A)23 Absolute Max. Power Diss. (W)100 Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150 Thermal Resistance Junc-Case1.2 Thermal Resistance Junc-Amb.80 g(fe) Min. (S) Trans. admitt.3.1 g(fe) Max. (S) Trans. admitt.8.6 @I(C) (A) (Test Condition)12 @V(CE) (V) (Test Condition)100 V(CE)sat Max. (V)3.0 @I(C) (A) (Test Condition)12 @V(GE) (Test Condition)15 td(on) Max (s) On time delay67n t(r) Max. (s) Rise time56n t(d)off Max. (s) Off time250n t(f) Max. (s) Fall time.270n V(GE)th Max. (V)5.5 I(GES) Max. (A)100n
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