IXFB30N120P
PolarTM HiPerFETTM
Power MOSFET
VDSS
ID25
RDS(on)
trr
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
=
=
≤
≤
1200V
30A
350mΩ
Ω
300ns
PLUS264TM
Symbol
Test Conditions
VDSS
TJ = 25°C to 150°C
Maximum Ratings
1200
V
VDGR
TJ = 25°C to 150°C, RGS = 1MΩ
1200
V
VGSS
Continuous
± 30
V
VGSM
Transient
± 40
V
ID25
TC = 25°C
30
A
IDM
TC = 25°C, Pulse Width Limited by TJM
75
A
IA
TC = 25°C
15
A
EAS
TC = 25°C
2.0
J
dv/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
15
V/ns
PD
TC = 25°C
1250
W
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
TJ
TL
1.6mm (0.062 in.) from Case for 10s
300
°C
TSOLD
Plastic Body for 10s
260
°C
FC
Mounting Torque
30..120/6.7..27
N/lb.
10
g
Weight
G
D
S
G = Gate
S = Source
Tab
D
= Drain
Tab = Drain
Features
Fast Intrinsic Diode
Avalanche Rated
Low RDS(ON) and QG
Low Package Inductance
Advantages
Plus 264TM Package for Clip or Spring
Mounting
High Power Density
Easy to Mount
Space Savings
Applications
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ. Max.
BVDSS
VGS = 0V, ID = 3mA
1200
VGS(th)
VDS = VGS, ID = 1mA
3.5
IGSS
VGS = ± 30V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
V
© 2010 IXYS CORPORATION, All Rights Reserved
V
± 300
TJ = 125°C
6.5
nA
High Voltage Switch-Mode and
Resonant-Mode Power Supplies
High Voltage Pulse Power
Applications
High Voltage Discharge Circuits in
Laser Pulsers
Spark Igniters, RF Generators
High Voltage DC-DC Coverters
High Voltage DC-AC Inverters
50 μA
5.0 mA
350 mΩ
DS99825B(02/10)
