TLP358F
Photocouplers
GaAℓAs Infrared LED & Photo IC
TLP358F
1. Applications
•
Industrial Inverters
•
MOSFET Gate Drivers
•
IGBT Gate Drivers
•
Induction Cooktop and Home Appliances
2. General
The TLP358F is a photocoupler in a DIP8 package that consists of a GaAℓAs infrared light-emitting diode (LED)
optically coupled to an integrated high-gain, high-speed photodetector IC chip. It has an internal Faraday shield
that provides a guaranteed Common-mode transient immunity of ±20 kV/µs. The TLP358F is ideal for IGBT and
power MOSFET gate drive. The TLP358F satisfies 8 mm PC board spacing requirements. Absolute maximum
ratings and electrical characteristics are the same as in the TLP358.
3. Features
(1)
Buffer logic type (totem pole output)
(2)
Output peak current: ±6.0 A (max)
(3)
Operating temperature: -40 to 100
(4)
Supply current: 2 mA (max)
(5)
Supply voltage: 15 to 30 V
(6)
Threshold input current: 5 mA (max)
(7)
Propagation delay time: tpHL/tpLH = 500 ns (max)
(8)
Common-mode transient immunity: ±20 kV/µs (min)
(9)
Isolation voltage: 3750 Vrms (min)
(10) Safety standards
UL-approved: UL1577, File No.E67349
cUL-approved: CSA Component Acceptance Service No.5A File No.E67349
VDE-approved: EN60747-5-5, EN60065 or EN60950-1 (Note 1)
Note 1: When a VDE approved type is needed, please designate the Option (D4)
(D4).
Start of commercial production
©2016 Toshiba Corporation
1
2009-06
2016-01-22
Rev.3.0
