FDS7760A
N-Channel Logic Level PowerTrench® MOSFET
General Description
Features
This N-Channel Logic Level MOSFET is produced
using
Fairchild
Semiconductor’s
advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain
superior switching performance.
• 15 A, 30 V. RDS(ON) = 5.5 mΩ @ VGS = 10 V
RDS(ON) = 8 mΩ @ VGS = 4.5 V.
• Low gate charge (37nC typical)
• Fast switching speed.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
• High performance trench technology for extremely
low RDS(ON) .
Applications
• High power and current handling capability.
• DC/DC converter
• Load switch
• Motor drives
D
D
D
5
6
SO-8
S
S
S
Absolute Maximum Ratings
Symbol
2
8
G
3
7
D
4
1
o
TA=25 C unless otherwise noted
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
30
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current
(Note 1a)
15
A
PD
Power Dissipation for Single Operation
(Note 1a)
2.5
(Note 1b)
1.2
– Continuous
– Pulsed
60
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
W
1
-55 to +150
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1c)
50 (10 sec)
°C/W
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
30
°C/W
Package Outlines and Ordering Information
Device Marking
Device
Reel Size
Tape Width
Quantity
FDS7760A
FDS7760A
13’’
12mm
2500 units
©2002 Fairchild Semiconductor Corporation
FDS7760A Rev D (W)
FDS7760A
January 2002
FDS7760A
Typical Characteristics
2
VGS = 10V
ID, DRAIN CURRENT (A)
50
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
60
4.0V
5.0
3.5V
3.0V
40
30
20
2.5V
10
1.8
1.6
VGS = 4.0V
1.4
4.5V
5.0V
1.2
6.0V
7.0V
0.8
0
0
0.5
1
0
1.5
10
20
Figure 1. On-Region Characteristics.
50
60
0.02
ID = 7.5 A
ID = 9A
VGS = 10V
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
40
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
1.4
30
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
1.2
1
0.8
0.6
-50
-25
0
25
50
75
100
125
0.015
0.01
TA = 125oC
0.005
o
TA = 25 C
0
150
2
o
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with
Temperature.
4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
80
VGS = 0V
o
TA = -55 C
o
25 C
70
I S, REVERSE DRAIN CURRENT (A)
VDS = 5V
ID, DRAIN CURRENT (A)
10V
1
o
125 C
60
50
40
30
20
10
10
TA = 125oC
1
25o C
0.1
o
-55 C
0.01
0.001
0.0001
0
1
1.5
2
2.5
3
3.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
4
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS7760A Rev D (W)
