TK25A10K3
TOSHIBA Field Effect Transistor
Silicon N Channel MOS Type (U-MOSIV)
TK25A10K3
Swiching Regulator Applications
•
Low drain-source ON resistance: RDS (ON) = 31 mΩ (typ.)
•
High forward transfer admittance: |Yfs| = 50 S (typ.)
•
Low leakage current: IDSS = 10 μA (max) (VDS = 100 V)
•
Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
100
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
100
V
Gate-source voltage
VGSS
±20
V
DC
(Note 1)
ID
25
Pulse
(Note 1)
IDP
50
Drain power dissipation (Tc = 25°C)
PD
25
W
Single pulse avalanche energy
(Note 2)
EAS
39
mJ
Avalanche current
IAR
25
A
Repetitive avalanche energy (Note 3)
EAR
1.72
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Drain current
A
1: Gate
2: Drain
3: Source
JEDEC
JEITA
SC-67
TOSHIBA
Note:
⎯
2-10U1B
Weight: 1.7 g (typ.)
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 25 V, Tch = 25°C, L = 100 μH, RG = 25 Ω, IAR = 25 A
Note 3: Repetitive rating; pulse width limited by maximum channel temperature.
Thermal Characteristics
Characteristics
2
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch−c)
5.0
°C / W
Thermal resistance, channel to
ambient
Rth (ch−a)
62.5
°C / W
1
3
This transistor is an electrostatic sensitive device. Please handle with caution.
Start of commercial production
2009-06
1
2013-11-01
