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RTQ020N03TRPBF
RTQ020N03 RTQ020N03FRA Transistors 2.5V Drive Nch MOS FET AEC-Q101 Qualified RTQ020N03FRA RTQ020N03 Structure Silicon N-channel MOS FET External dimensions (Unit : mm) TSMT6 1.0MAX 2.9 1.9 0.95 0.95 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 3) Low voltage drive (2.5V drive). (5) 0.85 0.7 (4) 1.6 2.8 (6) (2) (3) 1pin mark 0.16 0.4 Each lead has same dimensions Applications Switching Abbreviated symbol : QS Packaging specifications Inner circuit Package Type 0~0.1 0.3~0.6 (1) (6) Taping (5) (4) TR Code Basic ordering unit (pieces) 3000 ∗2 RTQ020N03FRA RTQ020N03 ∗1 (1) (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (3) (1) Drain (2) Drain (3) Gate (4) Source (5) Drain (6) Drain Absolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipation Channel temperature Range of storage temperature Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg Limits 30 12 ±2.0 ±8.0 1.0 8.0 1.25 150 −55 to +150 Unit V V A A A A W °C °C Symbol Rth(ch-a) ∗ Limits 100 Unit °C/W ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board Thermal resistance Parameter Channel to ambient ∗ Mounted on a ceramic board 1/2
ROHM
ローム株式会社
日本
炭素皮膜抵抗の特許を元に創業した。社名のROHM（R:抵抗 Ohm:抵抗を示す単位）はそこに由来する。その後、大規模集積回路の製造を手がけ始め、現在は様々な機能を顧客の要望に応じてLSI上に集積するカスタムLSIが主力となっている。
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