Very Low Power CMOS SRAM
32K X 8 bit
BS62LV256
Pb-Free and Green package materials are compliant to RoHS
FEATURES
DESCRIPTION
Wide VCC operation voltage : 2.4V ~ 5.5V
Very low power consumption :
VCC = 3.0V Operation current : 25mA (Max.) at 70ns
1mA (Max.) at 1MHz
O
O
Standby current : 0.4/0.7uA(Max.) at 70 C/85 C
VCC = 5.0V Operation current : 40mA (Max.) at 55ns
2mA (Max.) at 1MHz
O
O
Standby current : 4/5uA (Max.) at 70 C/85 C
High speed access time :
-55
55ns(Max.) at VCC : 4.5~5.5V
-70
70ns(Max.) at VCC : 3.0~5.5V
Automatic power down when chip is deselected
Easy expansion with CE and OE options
Three state outputs and TTL compatible
Fully static operation
Data retention supply voltage as low as 1.5V
The BS62LV256 is a high performance, very low power CMOS Static
Random Access Memory organized as 32,768 by 8 bits and
operates form a wide range of 2.4V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both
high speed and low power features with maximum CMOS standby
O
current of 0.7uA/5uA at 3V/5V at 85 C and maximum access time of
55/70ns.
Easy memory expansion is provided by an active LOW chip enable
(CE), and active LOW output enable (OE) and three-state output
drivers.
The BS62LV256 has an automatic power down feature, reducing the
power consumption significantly when chip is deselected.
The BS62LV256 is available in DICE form, JEDEC standard 28 pin
330mil Plastic SOP, 600mil Plastic DIP, 8mmx13.4mm TSOP
(normal type).
POWER CONSUMPTION
POWER DISSIPATION
PRODUCT
FAMILY
OPERATING
TEMPERATURE
STANDBY
Operating
(ICCSB1, Max)
VCC=5.0V
VCC=3.0V
PKG TYPE
(ICC, Max)
1MHz
VCC=5.0V
10MHz
fMax.
1MHz
VCC=3.0V
10MHz
fMax.
BS62LV256DC
BS62LV256PC
BS62LV256SC
DICE
Commercial
O
O
+0 C to +70 C
4.0uA
0.4uA
1.5mA
18mA
35mA
0.8mA
12mA
20mA
Industrial
O
-40 C to +85 C
BS62LV256SI
O
PDIP-28
5.0uA
0.7uA
2mA
20mA
40mA
1mA
15mA
25mA
BS62LV256TI
SOP-28
TSOP-28
BLOCK DIAGRAM
PIN CONFIGURATIONS
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
•
BS62LV256PC
BS62LV256PI
BS62LV256SC
BS62LV256SI
28
27
26
25
24
23
22
21
20
19
18
17
16
15
VCC
WE
A13
A8
A9
A11
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
A5
A6
A7
A12
A14
A13
A8
A9
A11
Address
9
Input
512
Row
Decoder
512
DQ0
8
DQ1
DQ2
DQ4
8
DQ5
DQ6
1
2
3
4
5
6
7
8
9
10
11
12
13
14
BS62LV256TC
BS62LV256TI
28
27
26
25
24
23
22
21
20
19
18
17
16
15
Memory Array
512X512
Buffer
Data
Input
Buffer
8
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
GND
DQ2
DQ1
DQ0
A0
A1
A2
Data
Output
Buffer
Column I/O
Write Driver
Sense Amp
DQ3
OE
A11
A9
A8
A13
WE
VCC
A14
A12
A7
A6
A5
A4
A3
SOP-28
TSOP-28
BS62LV256TC
BS62LV256PI
PDIP-28
8
64
Column Decoder
DQ7
6
CE
WE
Control
Address Input Buffer
OE
VCC
GND
A4 A3 A2 A1 A0 A10
Brilliance Semiconductor, Inc. reserves the right to change products and specifications without notice.
R0201-BS62LV256
1
Revision
2.7
Oct.
2008
