CRH01
TOSHIBA High Efficiency Rectifier Silicon Epitaxial Type
CRH01
Switching Mode Power Supply Applications
•
Unit: mm
Repetitive peak reverse voltage: VRRM = 200 V
•
Average forward current: IF (AV) = 1.0 A
•
Low forward voltage: VFM = 0.98 V (Max.)
•
Very Fast Reverse-Recovery Time: trr = 35 ns (Max.)
•
Suitable for compact assembly due to small surface-mount package
“S−FLATTM” (Toshiba package name)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Repetitive peak reverse voltage
VRRM
200
V
Average forward current
IF(AV)
1.0
A
Peak one cycle surge forward current
(non-repetitive)
IFSM
15 (50 Hz)
A
Tj
−40~150
°C
JEDEC
―
Tstg
−40~150
°C
JEITA
―
Junction temperature
Storage temperature range
TOSHIBA
3-2A1A
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
Weight: 0.013 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
VFM (1)
Repetitive peak reverse current
⎯
0.71
⎯
VFM (2)
IFM = 0.7 A
⎯
0.86
⎯
VFM (3)
Peak forward voltage
IFM = 0.1 A
IFM = 1.0 A
⎯
0.90
0.98
VRRM = 200 V
⎯
⎯
10
μA
IRRM
V
Reverse recovery time
trr
IF = 1 A, di/dt = −30 A/μs
⎯
⎯
35
ns
Forward recovery time
tfr
IF = 1 A
⎯
⎯
100
ns
Device mounted on a ceramic board
(soldering land: 2 mm × 2 mm)
⎯
Device mounted on a glass-epoxy board
(soldering land: 6 mm × 6 mm)
⎯
Thermal resistance
Rth (j-a)
1
⎯
⎯
65
°C/W
130
2006-11-08
CRH01
iF – vF
PF (AV) – IF (AV)
1.0
Average forward power dissipation
PF (AV) (W)
Instantaneous forward current
iF (A)
10
150°C
75°C
Tj = 25°C
1
0.1
0.4
0.6
0.8
1.0
1.2
1.4
Instantaneous forward voltage VF
0.8
0°
180°
0.6
360°
0.4
0.2
0
0
1.6
Rectangular
waveform
(V)
0.2
0.4
0.6
0.8
Average forward current
1.0
IF (AV)
1.2
(A)
Surge forward current
Ta max – IF (AV)
(non-repetitive)
140
IFSM (A)
20
Device mounted on a
ceramic board
120
Peak surge forward current
Maximum allowable ambient temperature
Ta max (°C)
160
100
80
Rectangular
waveform
60
40
20
0°
Device mounted on a
glass-epoxy board
180°
360°
0
0
0.2
0.4
0.6
0.8
1.0
IF (AV)
Ta = 25°C
f = 50 Hz
16
12
8
4
0
1
(A)
Average forward current
1.2
10
100
Number of cycles
Cj – VR
rth (j-a) – t
(Typ.)
50
f = 1 MHz
(pF)
(1) Device mounted on a ceramic board:
Soldering land: 2 mm × 2 mm
100
(2)
(1)
10
1
1
10
100
1000
10000
30
Ta = 25°C
Cj
(2) Device mounted on a glass-epoxy board:
1000
Soldering land: 6 mm × 6 mm
Junction capacitance
Transient thermal impedance
rth (j-a) (°C/W)
10000
10
5
3
1
1
100000
Time t (ms)
10
Reverse voltage
3
100
VR
(V)
2006-11-08
