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CRH01TE85L,QROHS
CRH01 TOSHIBA High Efficiency Rectifier Silicon Epitaxial Type CRH01 Switching Mode Power Supply Applications • Unit: mm Repetitive peak reverse voltage: VRRM = 200 V • Average forward current: IF (AV) = 1.0 A • Low forward voltage: VFM = 0.98 V (Max.) • Very Fast Reverse-Recovery Time: trr = 35 ns (Max.) • Suitable for compact assembly due to small surface-mount package “S−FLATTM” (Toshiba package name) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Repetitive peak reverse voltage VRRM 200 V Average forward current IF(AV) 1.0 A Peak one cycle surge forward current (non-repetitive) IFSM 15 (50 Hz) A Tj −40~150 °C JEDEC ― Tstg −40~150 °C JEITA ― Junction temperature Storage temperature range TOSHIBA 3-2A1A Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in Weight: 0.013 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit VFM (1) Repetitive peak reverse current ⎯ 0.71 ⎯ VFM (2) IFM = 0.7 A ⎯ 0.86 ⎯ VFM (3) Peak forward voltage IFM = 0.1 A IFM = 1.0 A ⎯ 0.90 0.98 VRRM = 200 V ⎯ ⎯ 10 μA IRRM V Reverse recovery time trr IF = 1 A, di/dt = −30 A/μs ⎯ ⎯ 35 ns Forward recovery time tfr IF = 1 A ⎯ ⎯ 100 ns Device mounted on a ceramic board (soldering land: 2 mm × 2 mm) ⎯ Device mounted on a glass-epoxy board (soldering land: 6 mm × 6 mm) ⎯ Thermal resistance Rth (j-a) 1 ⎯ ⎯ 65 °C/W 130 2006-11-08 CRH01 iF – vF PF (AV) – IF (AV) 1.0 Average forward power dissipation PF (AV) (W) Instantaneous forward current iF (A) 10 150°C 75°C Tj = 25°C 1 0.1 0.4 0.6 0.8 1.0 1.2 1.4 Instantaneous forward voltage VF 0.8 0° 180° 0.6 360° 0.4 0.2 0 0 1.6 Rectangular waveform (V) 0.2 0.4 0.6 0.8 Average forward current 1.0 IF (AV) 1.2 (A) Surge forward current Ta max – IF (AV) (non-repetitive) 140 IFSM (A) 20 Device mounted on a ceramic board 120 Peak surge forward current Maximum allowable ambient temperature Ta max (°C) 160 100 80 Rectangular waveform 60 40 20 0° Device mounted on a glass-epoxy board 180° 360° 0 0 0.2 0.4 0.6 0.8 1.0 IF (AV) Ta = 25°C f = 50 Hz 16 12 8 4 0 1 (A) Average forward current 1.2 10 100 Number of cycles Cj – VR rth (j-a) – t (Typ.) 50 f = 1 MHz (pF) (1) Device mounted on a ceramic board: Soldering land: 2 mm × 2 mm 100 (2) (1) 10 1 1 10 100 1000 10000 30 Ta = 25°C Cj (2) Device mounted on a glass-epoxy board: 1000 Soldering land: 6 mm × 6 mm Junction capacitance Transient thermal impedance rth (j-a) (°C/W) 10000 10 5 3 1 1 100000 Time t (ms) 10 Reverse voltage 3 100 VR (V) 2006-11-08
TOSHIBA
株式会社 東芝セミコンダクター＆ストレージ社
日本
半導体部門、DRAM、フラッシュメモリ、プロセッサ、汎用LSI
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