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MMBTA42LT1GROHS
SMBTA42/MMBTA42 NPN Silicon High-Voltage Transistors • Low collector-emitter saturation voltage 2 3 • Complementary types: 1 SMBTA92 / MMBTA92(PNP) • Pb-free (RoHS compliant) package • Qualified according AEC Q101 Type SMBTA42/MMBTA42 Marking s1D Pin Configuration 1=B 2=E Package SOT23 3=C Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 300 Collector-base voltage VCBO 300 Emitter-base voltage VEBO 6 Collector current IC 500 Base current IB 100 Total power dissipation- Ptot 360 mW Junction temperature Tj 150 °C Storage temperature Tstg Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS Value Unit V mA TS ≤ 74 °C -65 ... 150 Value ≤ 210 Unit K/W 1For calculation of R thJA please refer to Application Note AN077 (Thermal Resistance Calculation) 1 2011-12-19 SMBTA42/MMBTA42 DC current gain hFE = ƒ(IC) VCE = 10 V 10 3 Operating range IC = ƒ(VCEO) TA = 25°C, D = 0 SMBTA 42/43 10 3 EHP00844 mA 5 10 µs h FE 10 IC 10 2 2 100 µs 5 10 1 1 ms DC 10 1 10 0 5 10 0 -1 10 5 10 0 5 10 1 5 10 2 mA 10 10 -1 0 10 3 10 1 10 2 V Collector cutoff current ICBO = ƒ(TA) VCBO = 160 V VCE = 10V 10 3 SMBTA 42/43 EHP00843 10 4 nA mA SMBTA 42/43 EHP00842 ΙC 10 3 VCE ΙC Collector current IC = ƒ(VBE ) 10 Ι CBO 2 max 10 3 5 5 10 2 5 10 1 5 typ 10 1 5 10 0 10 0 5 5 10 -1 10 -1 0 0.5 V 1.0 1.5 0 V BE 50 C 150 100 TA 3 2011-12-19
ONS
ON Semiconductor
U.S.A
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