Philips Semiconductors
Product specification
PowerMOS transistors
Avalanche energy rated
PHW20N50E
FEATURES
SYMBOL
• Repetitive Avalanche Rated
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Low thermal resistance
QUICK REFERENCE DATA
d
VDSS = 500 V
ID = 20 A
g
RDS(ON) ≤ 0.27 Ω
s
GENERAL DESCRIPTION
PINNING
N-channel, enhancement mode
field-effect
power
transistor,
intended for use in off-line switched
mode power supplies, T.V. and
computer monitor power supplies,
d.c. to d.c. converters, motor control
circuits and general purpose
switching applications.
PIN
SOT429 (TO247)
DESCRIPTION
1
gate
2
drain
3
source
tab
drain
1
The PHW20N50E is supplied in the
SOT429 (TO247) conventional
leaded package.
2
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDSS
VDGR
VGS
ID
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Tj = 25 ˚C to 150˚C
Tj = 25 ˚C to 150˚C; RGS = 20 kΩ
IDM
PD
Tj, Tstg
Pulsed drain current
Total dissipation
Operating junction and
storage temperature range
- 55
500
500
± 30
20
12.4
80
250
150
V
V
V
A
A
A
W
˚C
MIN.
MAX.
UNIT
-
1300
mJ
-
32
mJ
-
20
A
Tmb = 25 ˚C; VGS = 10 V
Tmb = 100 ˚C; VGS = 10 V
Tmb = 25 ˚C
Tmb = 25 ˚C
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
EAS
EAR
IAS, IAR
CONDITIONS
Non-repetitive avalanche
energy
Unclamped inductive load, IAS = 20 A;
tp = 0.2 ms; Tj prior to avalanche = 25˚C;
VDD ≤ 50 V; RGS = 50 Ω; VGS = 10 V
Repetitive avalanche energy1 IAR = 20 A; tp = 2.5 µs; Tj prior to
avalanche = 25˚C; RGS = 50 Ω; VGS = 10 V
Repetitive and non-repetitive
avalanche current
1 pulse width and repetition rate limited by Tj max.
December 1998
1
Rev 1.000
