RN2101∼RN2106
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2101, RN2102, RN2103,
RN2104, RN2105, RN2106
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Unit: mm
Built-in bias resistors
Simplified circuit design
Fewer parts and simplified manufacturing process
Complementary to RN1101~RN1106
Equivalent Circuit and Bias Resistor Values
Type No.
R1 (kΩ)
R2 (kΩ)
RN2101
4.7
4.7
RN2102
10
10
RN2103
22
22
RN2104
47
47
RN2105
2.2
47
RN2106
4.7
47
JEDEC
EIAJ
TOSHIBA
Weight: 2.4 mg
Symbol
Rating
Unit
VCBO
−50
V
VCEO
−50
V
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
RN2101~2106
RN2101~2104
RN2105, 2106
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
−10
VEBO
−5
V
IC
RN2101~2106
―
―
2-2H1A
−100
mA
PC
100
mW
Tj
150
°C
Tstg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2007-11-01