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部品型式

MT47H64M16HR-3:E

製品説明
仕様・特性

1Gb: x4, x8, x16 DDR2 SDRAM Features DDR2 SDRAM MT47H256M4 – 32 Meg x 4 x 8 banks MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Options1 Features • • • • • • • • • • • • • • • • • • • Configuration – 256 Meg x 4 (32 Meg x 4 x 8 banks) – 128 Meg x 8 (16 Meg x 8 x 8 banks) – 64 Meg x 16 (8 Meg x 16 x 8 banks) • FBGA package (Pb-free) – x16 – 84-ball FBGA (8mm x 12.5mm) Rev. G, H • FBGA package (Pb-free) – x4, x8 – 60-ball FBGA (8mm x 11.5mm) Rev. G • FBGA package (Pb-free) – x4, x8 – 60-ball FBGA (8mm x 10mm) Rev. H • FBGA package (lead solder) – x16 – 84-ball FBGA (8mm x 12.5mm) Rev. G, H • FBGA package (lead solder) – x4, x8 – 60-ball FBGA (8mm x 11.5mm) Rev. G • FBGA package (lead solder) – x4, x8 – 60-ball FBGA (8mm x 10mm) Rev. H • Timing – cycle time – 1.875ns @ CL = 7 (DDR2-1066) – 2.5ns @ CL = 5 (DDR2-800) – 2.5ns @ CL = 6 (DDR2-800) – 3.0ns @ CL = 4 (DDR2-667) – 3.0ns @ CL = 5 (DDR2-667) – 3.75ns @ CL = 4 (DDR2-533) • Self refresh – Standard – Low-power • Operating temperature – Commercial (0°C ≤ TC ≤ 85°C) – Industrial (–40°C ≤ TC ≤ 95°C; –40°C ≤ TA ≤ 85°C) – Automotive (–40°C ≤ TC , TA ≤ 105ºC) • Revision VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V JEDEC-standard 1.8V I/O (SSTL_18-compatible) Differential data strobe (DQS, DQS#) option 4n-bit prefetch architecture Duplicate output strobe (RDQS) option for x8 DLL to align DQ and DQS transitions with CK 8 internal banks for concurrent operation Programmable CAS latency (CL) Posted CAS additive latency (AL) WRITE latency = READ latency - 1 tCK Selectable burst lengths (BL): 4 or 8 Adjustable data-output drive strength 64ms, 8192-cycle refresh On-die termination (ODT) Industrial temperature (IT) option Automotive temperature (AT) option RoHS-compliant Supports JEDEC clock jitter specification Note: PDF: 09005aef821ae8bf 1GbDDR2.pdf – Rev. V 6/10 EN 1 Marking 256M4 128M8 64M16 HR HQ CF HW HV JN -187E -25E -25 -3E -3 -37E None L None IT AT :G/:H 1. Not all options listed can be combined to define an offered product. Use the Part Catalog Search on www.micron.com for product offerings and availability. Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2004 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.

ブランド

MICRON

会社名

Micron Technology

本社国名

U.S.A

事業概要

メモリ・ストレージ用の各種半導体メモリ(DRAMやフラッシュメモリとそれらの搭載製品群)を製造・販売している。主力製品は、DRAM, FLASH MEMORY

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