HOME＞在庫検索＞在庫情報
1SS193TE85L
1SS193 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS193 Unit: mm Ultra High Speed Switching Application Small package : SC-59 Low forward voltage : VF (3) = 0.9V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.9pF (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current IFM 300 mA Average forward current IO 100 mA IFSM 2 A Power dissipation P 150 mW Junction temperature Tj 125 °C Tstg −55 to 125 °C Maximum (peak) reverse voltage Surge current (10ms) Storage temperature range JEDEC JEITA SC-59 1-3G1B TOSHIBA Weight: 0.012g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max VF (1) Reverse current ― 0.60 ― VF (2) IF = 10mA ― 0.72 ― VF (3) Forward voltage IF =1mA IF = 100mA ― 0.90 1.20 IR (1) VR = 30V ― ― 0.1 IR (2) VR = 80V ― ― 0.5 Unit V μA Total capacitance CT VR = 0, f = 1MHz ― 0.9 3.0 pF Reverse recovery time trr IF = 10mA (Fig.1) ― 1.6 4.0 ns Marking Start of commercial production 1982-05 1 2014-08-25
お買い上げ小計が１万円以上の場合は送料はサービスさせて頂きます。１万円未満の場合、また時間指定便はお客様負担となります。（送料は地域により異なります。）
