Very Low Power CMOS SRAM
512K X 8 bit
BS62LV4006
Pb-Free and Green package materials are compliant to RoHS
FEATURES
DESCRIPTION
Wide VCC operation voltage : 2.4V ~ 5.5V
Very low power consumption :
Operation current : 30mA (Max.) at 55ns
VCC = 3.0V
2mA (Max.) at 1MHz
O
Standby current : 2/4uA (Max.) at 70/85 C
Operation current : 70mA (Max.) at 55ns
VCC = 5.0V
10mA (Max.) at 1MHz
O
Standby current : 10/20uA (Max.) at 70/85 C
High speed access time :
-55
55ns (Max.) at VCC=3.0~5.5V
-70
70ns (Max.) at VCC=2.7~5.5V
Automatic power down when chip is deselected
Easy expansion with CE and OE options
Three state outputs and TTL compatible
Fully static operation
Data retention supply voltage as low as 1.5V
The BS62LV4006 is a high performance, very low power CMOS
Static Random Access Memory organized as 524,288 by 8 bits and
operates form a wide range of 2.4V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both
high speed and low power features with maximum CMOS standby
O
current of 4/20uA at Vcc=3V/5V at 85 C and maximum access time
of 55/70ns.
Easy memory expansion is provided by an active LOW chip enable
(CE), and active LOW output enable (OE) and three-state output
drivers.
The BS62LV4006 has an automatic power down feature, reducing
the power consumption significantly when chip is deselected.
The BS62LV4006 is available in DICE form, JEDEC standard 32 pin
450mil Plastic SOP, 600mil Plastic DIP, 400 mil TSOP II,
8mmx13.4mm STSOP and 8mmx20mm TSOP package.
POWER CONSUMPTION
POWER DISSIPATION
PRODUCT
FAMILY
OPERATING
TEMPERATURE
STANDBY
VCC=5.0V
BS62LV4006DC
BS62LV4006EC
BS62LV4006PC
BS62LV4006SC
BS62LV4006STC
BS62LV4006TC
BS62LV4006EI
BS62LV4006PI
BS62LV4006SI
BS62LV4006STI
BS62LV4006TI
Operating
(ICCSB1, Max)
VCC=3.0V
1MHz
1MHz
2.0uA
9mA
43mA
68mA
1.5mA
18mA
29mA
Industrial
O
O
-40 C to +85 C
20uA
4.0uA
10mA
45mA
70mA
2mA
20mA
30mA
BS62LV4006TC
BS62LV4006TI
BS62LV4006STC
BS62LV4006STI
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
GND
DQ2
DQ1
DQ0
A0
A1
A2
A3
A12
A14
A16
A18
A15
A17
A13
A8
A9
A11
Address
10
Input
•
BS62LV4006EC
BS62LV4006EI
BS62LV4006SC
BS62LV4006SI
BS62LV4006PC
BS62LV4006PI
1024
Row
Decoder
4096
DQ0
8
Data
Input
Buffer
8
VCC
A15
A17
WE
A13
A8
A9
A11
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
DQ4
8
DQ5
DQ6
8
256
Column Decoder
DQ7
9
CE
WE
Data
Output
Buffer
Column I/O
Write Driver
Sense Amp
DQ3
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
Memory Array
1024 x 4096
Buffer
DQ2
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
DICE
TSOP II-32
PDIP-32
SOP-32
STSOP-32
TSOP-32
TSOP II-32
PDIP-32
SOP-32
STSOP-32
TSOP-32
BLOCK DIAGRAM
DQ1
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
fMax.
10uA
•
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
fMax.
VCC=3V
10MHz
Commercial
O
O
+0 C to +70 C
PIN CONFIGURATIONS
A11
A9
A8
A13
WE
A17
A15
VCC
A18
A16
A14
A12
A7
A6
A5
A4
PKG TYPE
(ICC, Max)
VCC=5V
10MHz
Control
Address Input Buffer
OE
VCC
GND
A7 A6 A5 A4 A3 A2 A1 A0 A0
Brilliance Semiconductor, Inc. reserves the right to change products and specifications without notice.
R0201-BS62LV4006
1
Revision
1.5
Oct.
2008