2N3700UB
Silicon NPN Transistor
Data Sheet
Description
Applications
SEMICOA Corporation offers:
• General purpose
• Low power
• NPN silicon transistor
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N3700UBJ)
• JANTX level (2N3700UBJX)
• JANTXV level (2N3700UBJV)
• JANS level (2N3700UBJS)
• JANSR level (2N3700UBJSR)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
Features
• Radiation testing (total dose) upon request
•
•
•
•
Hermetically sealed Cersot ceramic
Also available in chip configuration
Chip geometry 4500
Reference document:
MIL-PRF-19500/391
Benefits
• Qualification Levels: JAN, JANTX,
JANTXV, JANS and JANSR
• Radiation testing available
Please contact SEMICOA for special configurations
www.SEMICOA.com or (714) 979-1900
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Power Dissipation, TA = 25OC
Derate linearly above 37.5OC
Power Dissipation, TC = 25OC
Derate linearly above 25OC
Thermal Resistance
Operating Junction Temperature
Storage Temperature
Copyright 2010
Rev. G
TC = 25°C unless otherwise specified
Symbol
VCEO
VCBO
VEBO
IC
PT
PT
RθJA
TJ
TSTG
Rating
80
140
7
1
0.5
3.08
1.16
6.63
325
Unit
Volts
Volts
Volts
A
W
mW/°C
W
mW/°C
°C/W
-65 to +200
°C
SEMICOA Corporation
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
www.SEMICOA.com
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