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AS4LC1M16E5-60TC

製品説明
仕様・特性

AS4LC1M16E5 Š 3V 1M×16 CMOS DRAM (EDO) Features • Organization: 1,048,576 words × 16 bits • High speed • Read-modify-write • TTL-compatible, three-state DQ • JEDEC standard package and pinout - 50/60 ns RAS access time - 20/25 ns hyper page cycle time - 12/15 ns CAS access time - 400 mil, 42-pin SOJ - 400 mil, 44/50-pin TSOP 2 • Low power consumption • 3V power supply (AS4LC1M16E5) • 5V tolerant I/Os; 5.5V maximum VIH • Industrial and commercial temperature available - Active: 500 mW max (-60) - Standby: 3.6 mW max, CMOS DQ • Extended data out • 1024 refresh cycles, 16 ms refresh interval - RAS-only or CAS-before-RAS refresh or self-refresh Pin arrangement Vcc DQ1 DQ2 DQ3 '4 Vcc DQ5 DQ6 DQ7 DQ8 NC NC WE RAS NC NC A0 A1 A2 A3 Vcc 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 Pin designation 7623  6242 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 V66 DQ16 DQ15 DQ14 DQ13 V66 DQ12 DQ11 DQ10 DQ9 NC LCAS UCAS OE A9 A8 A7 A6 A5 A4 V66 V&& DQ1 DQ2 DQ DQ4 V&& DQ5 DQ6 DQ7 DQ8 NC 1 2 3 4 5 6 7 8 9 10 11 50 49 48 47 46 45 44 43 42 41 40 V66 DQ16 DQ15 DQ14 DQ13 V66 DQ12 DQ11 DQ10 DQ9 NC NC NC WE RAS NC NC A0 A1 A2 A3 V&& 15 16 17 18 19 20 21 22 23 24 25 36 35 34 33 32 31 30 29 28 27 26 NC LCAS UCAS OE A9 A8 A7 A6 A5 A4 V66 Pin(s) Description A0 to A9 Address inputs RAS Row address strobe DQ1 to DQ16 Input/output OE Output enable WE Write enable UCAS Column address strobe, upper byte LCAS Column address strobe, lower byte VCC Power VSS Ground Selection guide Symbol -50 -60 Unit Maximum RAS access time tRAC 50 60 ns Maximum column address access time tAA 25 30 ns Maximum CAS access time tCAC 12 15 ns Maximum output enable (OE) access time tOEA 13 15 ns Minimum read or write cycle time tRC 80 100 ns Minimum hyper page mode cycle time tHPC 20 25 ns Maximum operating current ICC1 140 130 mA Maximum CMOS standby current ICC5 1.0 1.0 mA .  Y Alliance Semiconductor Alliance Semiconductor P.  RI  &RS\ULJKW ‹ 6HPLFRQGXFWRU ULJKWV UHVHUYHG

ブランド

ALLIANCEMEMORYINC

会社名

Alliance Memory, Inc.

本社国名

U.S.A

事業概要

Alliance Memory is a worldwide fabless manufacturer of legacy memory products that are pin for pin drop-in replacements for SRAM and DRAM ICs from Micron, Samsung, ISSI, Cypress, Nanya, Hynix and others. Our product portfolio includes a full range of 3.3V and 5V Asynchronous SRAMs used with mainstream digital signal processors (DSPs) and microcontrollers; and synchronous SRAMs, low-power SRAMs, ZMD low-power SRAMs, 3.3V synchronous DRAMs (SDR), mobile DDRs, 2.5V single (DDR1), 1.8V double (DDR2), and 1.5V and 1.35V triple rate (DDR3) synchronous DRAMs. A high wafer die investment means we can minimize or eliminate die shrinks while maintaining stable pricing. Our goal is to establish long-term relationships with customers and to provide long-term support for the parts we manufacture. We deliver most of our SRAM and DRAM products direct from stock, with inventory held in the U.S., Shanghai and Taiwan. Our competitive pricing, quick sample turnaround, and world-class customer service and support have made Alliance Memory a trusted resource for a growing range of must-have memory ICs for the communications, computing, industrial, and consumer markets. Alliance Memory, Inc. is a privately held company with headquarters in San Carlos, California.

供給状況

　
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