Features
• Low Voltage Operation
•
•
•
•
•
•
•
•
•
– 2.7V R
ead
– 5V Program/Erase
Fast Read Access Time - 120 ns
Internal Erase/Program Control
Sector Architecture
– One 8K Words (16K bytes) Boot Block with Programming Lockout
– Two 8K Words (16K bytes) Parameter Blocks
– One 488K Words (976K bytes) Main Memory Array Block
Fast Sector Erase Time - 10 seconds
Word-By-Word Programming - 30 µs/Word
Hardware Data Protection
DATA Polling For End Of Program Detection
Low Power Dissipation
– 25 mA Active Current
– 50 µA CMOS Standby Current
Typical 10,000 Write Cycles
8-Megabit
(512K x 16)
Flash Memory
Description
The AT49BV8192(T) and AT49LV8192(T) are 3-volt, 8-megabit Flash Memories organized as 512K words of 16 bits each. Manufactured with Atmel’s advanced nonvolatile
CMOS technology, the devices offer access times to 120 ns with power dissipation of
just 67 mW at 2.7V read. When deselected, the CMOS standby current is less than
50 µA.
(continued)
Pin Configurations
Pin Name
Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
RESET
Reset
VPP
Program/Erase Power Supply
I/O0 - I/O15
Data Inputs/Outputs
NC
No Connect
Not Recommended
for New Design
Use AT49BV8192A(T)
Function
A0 - A18
AT49BV8192
AT49BV8192T
AT49LV8192
AT49LV8192T
SOIC (SOP)
VPP
A18
A17
A7
A6
A5
A4
A3
A2
A1
A0
CE
GND
OE
I/O0
I/O8
I/O1
I/O9
I/O2
I/O10
I/O3
I/O11
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
RESET
WE
A8
A9
A10
A11
A12
A13
A14
A15
A16
NC
GND
I/O15
I/O7
I/O14
I/O6
I/O13
I/O5
I/O12
I/O4
VCC
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TSOP Top View
Type 1
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
WE
RESET
VPP
NC
NC
A18
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A16
NC
GND
I/O15
I/O7
I/O14
I/O6
I/O13
I/O5
I/O12
I/O4
VCC
I/O11
I/O3
I/O10
I/O2
I/O9
I/O1
I/O8
I/O0
OE
GND
CE
A0
Rev. 0978D–12/98
1