CY7C027V/027AV/028V
CY7C037AV/038V
3.3 V 32K/64K x 16/18 Dual-Port Static
RAM
Features
■
■
■
True dual-ported memory cells which allow
simultaneous access of the same memory location
[1]
■ 32K x 16 organization (CY7C027V/027AV
)
■ 64K x 16 organization (CY7C028V)
■ 32K x 18 organization (CY7C037AV)
■ 64K x 18 organization (CY7C038V)
■ 0.35 micron Complementary metal oxide semiconductor
(CMOS) for optimum speed and power
■ High speed access: 15, 20, and 25 ns
■ Low operating power
■ Active: ICC = 115 mA (typical)
■ Standby: ISB3 = 10 A (typical)
■
■
■
■
■
■
■
■
■
Fully asynchronous operation
Automatic power-down
Expandable data bus to 32/36 bits or more using Master/Slave
chip select when using more than one device
On-chip arbitration logic
Semaphores included to permit software handshaking
between ports
INT flag for port-to-port communication
Separate upper-byte and lower-byte control
Dual chip enables
Pin select for Master or Slave
Commercial and Industrial temperature ranges
100-pin Pb-free Thin quad plastic flatpack (TQFP) and 100-pin
TQFP
Logic Block Diagram
R/WL
UBL
R/WR
UBR
CE0L
CE1L
CEL
CE0R
CE1R
CER
LBL
LBR
OEL
OER
[2]
I/O8/9L–I/O15/17L
[3]
8/9
8/9
8/9
I/O
Control
I/O0L–I/O7/8L
[4]
A0L–A14/15L
[4]
15/16
Address
Decode
15/16
[3]
I/O0L–I/O7/8R
Address
Decode
True Dual-Ported
RAM Array
15/16
[4]
A0R–A14/15R
15/16
A0L–A14/15L
CEL
OEL
R/WL
SEML
BUSYL
INTL
UBL
LBL
8/9
I/O
Control
[2]
I/O8/9L–I/O15/17R
[4]
A0R–A14/15R
CER
OER
R/WR
SEMR
Interrupt
Semaphore
Arbitration
[5]
[5]
M/S
BUSYR
INTR
UBR
LBR
Notes
1. CY7C027V, and CY7C027AV are functionally identical.
2. I/O8–I/O15 for x16 devices; I/O9–I/O17 for x18 devices.
3. I/O0–I/O7 for x16 devices; I/O0–I/O8 for x18 devices.
4. A0–A14 for 32K; A0–A15 for 64K devices.
5. BUSY is an output in master mode and an input in slave mode.
Cypress Semiconductor Corporation
Document #: 38-06078 Rev. *E
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised October 14, 2011
