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HY62UF1610LLM-10I
HY62UF16101 Series 64Kx16bit full CMOS SRAM DESCRIPTION FEATURES The HY62UF16101 is a high speed, low power and 1M bit full CMOS SRAM organized as 65,536 words by 16bit. The HY62UF16101 uses high performance full CMOS process technology and designed for high speed low power circuit technology. It is particularly well suited for used in high density low power system application. This device has a data retention mode that guarantees data to remain valid at a minimum power supply voltage of 1.5V. • Fully static operation and Tri-state output • TTL compatible inputs and outputs • Battery backup -. 1.5V(min) data retention • Standard pin configuration -. 48 - uBGA Product Voltage Speed No. (V) (ns) HY62UF16101 2.7~3.3 85*/100/120 HY62UF16101-I 2.7~3.3 85*/100/120 Note 1. Blank : Commercial, I : Industrial 2. Current value is max. Operation Current/Icc(mA) 15 15 Standby Current(uA) LL 15 15 Temperature (°C) 0~70 -40~85(I) * 85ns is available with 30pF test load PIN CONNECTION BLOCK DIAGRAM /OE A0 A1 A2 NC A6 IO2 IO3 A8 A9 Vcc IO13 NC NC IO5 Vss A11 IO15 IO14 A14 A15 IO6 IO7 A12 IO16 NC A12 A13 /WE IO8 A10 A13 A0 NC A8 A9 MEMORY ARRAY 64K x 16 WRITE DRIVER IO4 Vcc BLOCK DECODER A7 ADD INPUT BUFFER Vss IO12 NC I/O1 I/O8 DATA I/O BUFFER IO10 IO11 A5 A15 COLUMN DECODER /CS IO1 PRE DECODER A4 ADD INPUT BUFFER IO9 /UB A3 ROW DECODER SENSE AMP A14 ADD INPUT BUFFER A1~A7 /LB A10 A11 NC uBGA /CS /OE /LB /UB /WE PIN DESCRIPTION Pin Name /CS /WE /OE /LB /UB Pin Function Chip Select Write Enable Output Enable Lower Byte Control(I/O1~I/O8) Upper Byte Control(I/O9~I/O16) Pin Name I/O1~I/O16 A0~A15 Vcc Vss NC Pin Function Data Inputs / Outputs Address Inputs Power( 2.7V ~ 3.3V ) Ground No Connection This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev.09 /Jun. 00 Hyundai Semiconductor I/O9 I/O16
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