TECHNICAL DATA
NPN HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/439
Devices
Qualified Level
2N5038
JAN
JANTX
JANTXV
2N5039
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation @ TC = +250C (1)
Operating & Storage Temperature Range
Symbol
2N5038
2N5039
Units
VCEO
VCBO
VEBO
IB
IC
PT
90
150
75
125
Vdc
Vdc
Vdc
Adc
Adc
W
Top, Tstg
7.0
5.0
20
140
0
-65 to +200
C
TO-3*
(TO-204AA)
THERMAL CHARACTERISTICS
Characteristics
Symbol
Thermal Resistance, Junction-to-Case
RθJC
1) Derate linearly 800 mW/0C for TC > +250C
Max.
1.25
Unit
C/W
0
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
V(BR)CEO
90
75
Vdc
V(BR)EBO
7.0
Vdc
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 200 mAdc
Emitter-Base Breakdown Voltage
IE = 25 mAdc
Collector-Base Cutoff Current
VCE = 150 Vdc
VCE = 125 Vdc
Collector-Base Cutoff Current
VCE = 70 Vdc
VCE = 55 Vdc
Emitter-Base Cutoff Current
VEB = 5.0 Vdc
Collector-Emitter Cutoff Current
VBE = -1.5 Vdc VCE = 100 Vdc
VBE = -1.5 Vdc VCE = 85 Vdc
2N5038
2N5039
2N5038
2N5039
ICBO
1.0
1.0
µAdc
2N5038
2N5039
ICEO
1.0
1.0
µAdc
IEBO
1.0
µAdc
ICEX
5.0
5.0
µAdc
2N5038
2N5039
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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