K6R1016C1C-C/C-L, K6R1016C1C-I/C-P
CMOS SRAM
Document Title
64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating).
Operated at Commercial and Industrial Temperature Ranges.
Revision History
Rev. No.
History
Draft Data
Remark
Rev. 0.0
Initial release with preliminary.
Aug. 5. 1998
Preliminary
Rev. 1.0
Relax DC characteristics.
Item
ICC
12ns
15ns
20ns
Sep. 7. 1998
Preliminary
Sep. 17. 1998
Preliminary
Nov. 5. 1998
Final
Dec. 10. 1998
Final
Previous
90mA
88mA
85mA
Rev. 2.0
Add 48-fine pitch BGA.
Rev. 2.1
Changed
95mA
93mA
90mA
Changed device part name for FP-BGA.
Item
Previous
Symbol
Z
ex) K6R1016C1C-Z -> K6R1016C1C-F
Rev. 2.2
Changed device ball name for FP-BGA.
Previous
I/O1 ~ I/O8
I/O9 ~ I/O16
Changed
F
Changed
I/O9 ~ I/O16
I/O1 ~ I/O8
Rev. 3.0
Added Data Retention Characteristics.
Mar. 3. 1999
Final
Rev. 3.1
Add 10ns part.
Mar. 3. 2000
Final
Rev. 4.0
Delete 20ns speed bin
Sep.24. 2001
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions,
please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Revision 4.0
September 2001
