This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SA0683 (2SA683), 2SA0684 (2SA684)
Silicon PNP epitaxial planar type
Unit: mm
5.9±0.2
4.9±0.2
M
Di ain
sc te
on na
tin nc
ue e/
d
8.6±0.2
For low-frequency power amplification and driver amplification
Complementary to 2SC1383, 2SC1384
■ Features
13.5±0.5
0.7+0.3
–0.2
0.7±0.1
• Allowing supply with the radial taping
Collector-base voltage
(Emitter open)
Symbol
2SA0683
Rating
Unit
VCBO
−30
V
−60
2SA0684
Collector-emitter voltage 2SA0683
(Base open)
2SA0684
VCEO
Emitter-base voltage (Collector open)
VEBO
−25
V
(1.27)
−50
Collector current
IC
Peak collector current
ICP
Collector power dissipation
PC
Junction temperature
Tj
Storage temperature
Tstg
0.45+0.2
–0.1
0.45+0.2
–0.1
(1.27)
1 2 3
−5
V
−1
A
−1.5
(3.2)
Parameter
d
pla inc
Pl
ea
ne lud
se
pla m d m es
vis
ne ain ain foll
htt it
d te t o
p:/ fo
/w llo dis disc nan enan wing
ww wi co on ce c fo
.se ng ntin tin ty e ty ur
mi UR ue ued pe pe Pro
co L a d t ty
du
n.p bo yp pe
ct
life
an ut e
d
as lat
cy
on es
cle
ic. t in
sta
co fo
ge
.jp rm
.
/en at
ion
/
.
■ Absolute Maximum Ratings Ta = 25°C
1: Emitter
2: Collector
3: Base
EIAJ: SC-51
TO-92L-A1 Package
A
2.54±0.15
1
W
150
°C
−55 to +150
°C
■ Electrical Characteristics Ta = 25°C ± 3°C
2SA0684
VCBO
ce
/D
isc
on
tin
Collector-emitter voltage
(Base open)
Symbol
2SA0683
ue
Parameter
Collector-base voltage
(Emitter open)
2SA0683
2SA0684
an
Emitter-base voltage (Collector open)
en
Collector-base cutoff current (Emitter open)
int
Forward current transfer ratio *1
Conditions
IC = −10 µA, IE = 0
Min
Typ
IC = −2 mA, IB = 0
VEBO
IE = −10 µA, IC = 0
ICBO
V
VCB = −20 V, IE = 0
−25
V
−50
−5
V
− 0.1
µA
340
85
V
50
Ma
VCE = −10 V, IC = −500 mA
VCE = −5 V, IC = −1 A
hFE2
Collector-emitter saturation voltage
VCE(sat)
IC = −500 mA, IB = −50 mA
− 0.2
− 0.4
Base-emitter saturation voltage
VBE(sat)
IC = −500 mA, IB = −50 mA
− 0.85
−1.20
Transition frequency
VCB = −10 V, IE = 50 mA, f = 200 MHz
Collector output capacitance
(Common base, input open circuited)
Cob
200
VCB = −10 V, IE = 0, f = 1 MHz
fT
Unit
−60
VCEO
hFE1 *2
Max
−30
20
V
MHz
30
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
Q
R
S
hFE
85 to 170
120 to 240
170 to 340
Note) The part numbers in the parenthesis show conventional part number.
Publication date: February 2004
SJC00001CED
1