Si4562DY
Vishay Siliconix
N- and P-Channel 2.5-V (G-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
N-Channel
P-Channel
ID (A)
0.025 at VGS = 4.5 V
20
RDS(on) (Ω)
7.1
0.035 at VGS = 2.5 V
- 20
6.0
0.033 at VGS = - 4.5 V
- 6.2
0.050 at VGS = - 2.5 V
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET: 2.5 Rated
• Compliant to RoHS directive 2002/95/EC
- 5.0
SO-8
D1
S1
1
8
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
S2
D1
G2
G1
Top View
S1
D2
N-Channel MOSFET
Ordering Information: Si4562DY-T1-E3 (Lead (Pb)-free)
Si4562DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
VGS
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
ID
IDM
IS
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
TA = 25 °C
TA = 70 °C
N-Channel
20
P-Channel
- 20
± 12
7.1
5.7
40
1.7
- 6.2
- 4.9
- 40
- 1.7
Unit
V
A
Operating Junction and Storage Temperature Range
TJ, Tstg
2.0
1.3
- 55 to 150
°C
Symbol
Maximum Power Dissipationa
N- or P-Channel
Unit
RthJA
62.5
°C/W
PD
W
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Notes:
a. Surface Mounted on FR4 board, t ≤ 10 s.
Document Number: 70717
S09-0867-Rev. C, 18-May-09
www.vishay.com
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