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BUK108-50DLSON5242
Philips Semiconductors Product specification PowerMOS transistor Logic level TOPFET DESCRIPTION BUK108-50DL QUICK REFERENCE DATA Monolithic temperature and overload protected logic level power MOSFET in a 3 pin plastic surface mount envelope, intended as a general purpose switch for automotive systems and other applications. SYMBOL PARAMETER MAX. UNIT VDS ID PD Tj RDS(ON) Continuous drain source voltage Continuous drain current Total power dissipation Continuous junction temperature Drain-source on-state resistance 50 13.5 40 150 125 V A W ˚C mΩ APPLICATIONS IISL Input supply current 650 µA VIS = 5 V General controller for driving lamps motors solenoids heaters FEATURES Vertical power DMOS output stage Low on-state resistance Overload protection against over temperature Overload protection against short circuit load Latched overload protection reset by input 5 V logic compatible input level Control of power MOSFET and supply of overload protection circuits derived from input Lower operating input current permits direct drive by micro-controller ESD protection on input pin Overvoltage clamping for turn off of inductive loads FUNCTIONAL BLOCK DIAGRAM DRAIN O/V CLAMP POWER INPUT MOSFET RIG LOGIC AND PROTECTION SOURCE Fig.1. Elements of the TOPFET. PINNING - SOT404 PIN PIN CONFIGURATION DESCRIPTION mb 1 input 2 drain 3 source mb SYMBOL drain June 1996 D TOPFET I P 2 1 S 3 1 Rev 1.000
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