BCR 555
PNP Silicon Digital Transistor
• Switching circuit, inverter, interface circuit,
driver circuit
• Built in resistor (R1 = 2.2kΩ, R2 = 10kΩ)
Type
Marking Ordering Code
Pin Configuration
BCR 555
XDs
1=B
Q62702-C2383
Package
2=E
3=C
SOT-23
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
VCEO
50
Collector-base voltage
VCBO
50
Emitter-base voltage
VEBO
5
Input on Voltage
Vi(on)
12
DC collector current
IC
500
mA
Total power dissipation, TS = 79 °C
Ptot
330
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
V
- 65 ... + 150
Thermal Resistance
Junction ambient
1)
Junction - soldering point
RthJA
≤ 325
RthJS
≤ 215
K/W
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu
Semiconductor Group
1
Nov-27-1996
