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BC635
Medium Power Bipolar Transistor Pin Configuration: 1. Base 2. Collector 3. Emitter Features: • igh performance, low frequency devices typically with current ratings 1A up to 1W power dissipation H • NPN silicon planar epitaxial transistor • Driver stages of audio amplifier application Absolute Maximum Ratings Description Symbol BC635 Unit Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO 5 IC 1 A 800 6.4 mW mW/°C 2.75 22 W mW/°C Tj, Tstg -55 to +150 °C From Junction to Case Rth (j-c) 45 From Junction to Ambient Rth (j-a) 156 Collector Current Continuous Power Dissipation at Ta = 25°C Derate Above 25°C Power Dissipation at TC = 25°C Derate Above 25°C Operating and Storage Junction Temperature Range PD 45 V Thermal Resistance Page <1> °C/W 03/01/13 V1.0
SAMSUNG
Samsung Electronics Co., Ltd
韓国
DRAM製品、モバイル機器の製造販売メーカー
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