TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/510
DEVICES
LEVELS
2N6249
2N6249T1
2N6250
2N6250T1
2N6251
2N6251T1
JAN
JANTX
JANTXV
JANS
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
2N6249 2N6250 2N6251
Unit
2N6249T1 2N6250T1 2N6251T1
Collector-Emitter Voltage
VCEO
200
275
350
Vdc
Collector-Base Voltage
VCBO
300
375
450
Vdc
Emitter-Base Voltage
VEBO
6.0
Vdc
Collector Current
IC
10
Adc
Base Current
IB
5.0
Total Power Dissipation
@ TA = +25°C (1)
@ TC = +25°C (2)
PT
6.0
175
W
Top, Tstg
-65 to +200
°C
RθJC
1.0
°C/W
Operating & Storage Junction Temperature
Thermal Resistance, Junction-to-Case
TO-3 (TO-204AA)
NOTES:
(1) Derate linearly at 34.2 mW/°C for TA > +25°C
(2) Derate linearly at 1.0 mW/°C for TC > +25°C
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
2N6249, T1
2N6250, T1
2N6251, T1
V(BR)CEO
200
275
350
Vdc
Collector-Emitter Breakdown Voltage
IC = 200mAdc; L = 14mH; f = 30 – 60Hz; 2N6249, T1
RBE = 50Ω
2N6250, T1
(See Figure 10 of MIL-PRF-19500/510)
2N6251, T1
V(BR)CER
225
300
375
TO-254
Vdc
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
IC = 20mAdc; L = 42mH; f = 30 – 60Hz
(See Figure 10 of MIL-PRF-19500/510)
Emitter-Base Cutoff Current
VEB = 6.0Vdc
T4-LDS-0197 Rev. 1 (110296)
IEBO
100
µAdc
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