PD-90010A
IRF7809AV
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N-Channel Application-Specific MOSFETs
Ideal for CPU Core DC-DC Converters
Low Conduction Losses
Low Switching Losses
Minimizes Parallel MOSFETs for high current
applications
• 100% Tested for RG
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The IRF7809AV has been optimized for all parameters
that are critical in synchronous buck converters including
RDS(on), gate charge and Cdv/dt-induced turn-on immunity.
The IRF7809AV offers particulary low RDS(on) and high
Cdv/dt immunity for synchronous FET applications.
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 2W is possible in a typical
PCB mount application.
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Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced
conduction and switching losses make it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors.
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Top View
SO-8
DEVICE CHARACTERISTICS
IRF7809AV
RDS(on)
7.0mΩ
QG
41nC
Qsw
14nC
Qoss
30nC
Absolute Maximum Ratings
Parameter
Symbol
Gate-Source Voltage
IRF7809A V
VDS
Drain-Source Voltage
30
VGS
Continuous Drain or Source
TA = 25°C
Current (VGS ≥ 4.5V)
±12
ID
13.3
TL = 90°C
Pulsed Drain Current
Power Dissipation
14.6
IDM
TA = 25°C
PD
2.5
A
100
TL = 90°C
Junction & Storage Temperature Range
Units
V
W
3.0
TJ, TSTG
–55 to 150
°C
Continuous Source Current (Body Diode)
IS
2.5
A
Pulsed Source Current
ISM
50
Parameter
Maximum Junction-to-Ambient
RθJA
Max.
50
Units
°C/W
Maximum Junction-to-Lead
RθJL
20
°C/W
Thermal Resistance
8/23/05
