NPN SILICON PLANAR R.F.
MEDIUM POWER TRANSISTOR
ZTX327
ISSUE 2 MARCH 94
C
B
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Collector-Base Voltage
VCBO
VALUE
55
UNIT
V
Collector-Emitter Voltage
VCEO
VCER
30
55
V
V
Emitter-Base Voltage
VEBO
3.5
V
mA
Continuous Collector Current
IC
400
Power Dissipation
Ptot
1.5
W
Operating and Storage Temperature Range
Tj:Tstg
-55 to +175
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
Collector-Base
Breakdown Voltage
V(BR)CBO
55
TYP.
MAX. UNIT
V
IC=100µ A, IE=0
CONDITIONS.
Collector-Emitter
Sustaining Voltage
V(BR)CEO(sus)
30
V
IC=5mA, IB=0
V(BR)CER(sus)
55
Emitter-Base
Breakdown Voltage
V(BR)EBO
3.5
Collector-Emitter
Cut-Off Current
ICEO
Collector-Emitter
Saturation Voltage
VCE(SAT)
Static Forward
Current Transfer
hFE
15
Transitional
Frequency
fT
500
Output Capacitance
Cobo
R.F. power output
POUT
350
Efficiency
η
50
IC=5mA, RBE=10Ω
V
IE=100µ A,IC=0
20
µA
VCB=45V
1.0
V
IC=100mA, IB.=20mA
IC=50mA, VCE=5V
800
MHz
IC=25mA, VCE=15V
f=100MHz
pF
VCE=15V, IC=25mA
f=100MHz
440
mW
70
%
VCC=12V, PIN=80mW
f=400MHz
3.0
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