2SB906
TOSHIBA Transistor
Silicon PNP Diffused Type (PCT process)
2SB906
Audio Frequency Power Amplifier Application
•
Low collector saturation voltage
•
High power dissipation: PC = 20 W (Tc = 25°C)
•
Unit: mm
Complementary to 2SD1221
: VCE (sat) = −1.0 V (typ.) (IC = −3 A, IB = −0.3 A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
−60
V
Collector-emitter voltage
VCEO
−60
V
Emitter-base voltage
VEBO
−7
V
Collector current
IC
−3
A
Base current
IB
−0.5
A
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
PC
1.0
20
W
Tj
150
°C
Tstg
−55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Start of commercial production
1
1985-11
2013-11-01
