HiPerFETTM
Power MOSFETs
IXFH 26N50Q
IXFQ 26N50Q
IXFT 26N50Q
Q-Class
VDSS
ID25
RDS(on)
trr
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, High dv/dt
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
500
TJ = 25°C to 150°C; RGS = 1 MΩ
500
V
VGS
Continuous
±20
V
VGSM
Transient
±30
V
ID25
TC = 25°C
26
A
IDM
TC = 25°C
104
A
IAR
TC = 25°C
26
A
EAR
TC = 25°C
30
mJ
EAS
TC = 25°C
1.5
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 2 Ω
PD
TC = 25°C
V
A
Ω
ns
V
VDGR
= 500
= 26
= 0.20
≤ 250
5
V/ns
300
W
-55 ... +150
150
-55 ... +150
G
C
(TAB)
E
TO-268 (D3) (IXFT) Case Style
°C
300
TO-3P (IXFQ)
°C
Tstg
(TAB)
°C
TJM
TO-247 AD (IXFH)
°C
TJ
TL
1.6 mm (0.063 in) from case for 10 s
Md
Mounting torque
1.13/10
Nm/lb.in.
Weight
TO-247, TO-3P
TO-268
6
4
g
g
Symbol
Test Conditions
VDSS
VGS = 0 V, ID = 250 µA
VGS(th)
V DS = VGS, ID = 4 mA
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Note 2
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min.
typ.
max.
500
V
G
S
G = Gate,
S = Source,
(TAB)
D = Drain,
TAB = Drain
Features
IXYS advanced low Qg process
International standard packages
Low RDS (on)
TJ = 25°C
TJ = 125°C
V
±100
2.5
Unclamped Inductive Switching (UIS)
rated
Fast switching
nA
Molding epoxies meet UL 94 V-0
flammability classification
25
1
µA
mA
0.20
Ω
4.5
Advantages
Easy to mount
Space savings
High power density
© 2003 IXYS All rights reserved
DS99128(12/03)
