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DUMMYKCF256M
TIC256 SERIES SILICON TRIACS Copyright © 1997, Power Innovations Limited, UK q High Current Triacs q 20 A RMS q Glass Passivated Wafer q 400 V to 800 V Off-State Voltage q 150 A Peak Current q JULY 1991 - REVISED MARCH 1997 Max IGT of 50 mA (Quadrants 1 - 3) TO-220 PACKAGE (TOP VIEW) MT1 1 MT2 2 G 3 Pin 2 is in electrical contact with the mounting base. MDC2ACA absolute maximum ratings over operating case temperature (unless otherwise noted) RATING SYMBOL VALUE TIC256D TIC256M Repetitive peak off-state voltage (see Note 1) TIC256S UNIT 400 600 VDRM V 700 TIC256N 800 IT(RMS) 20 Peak on-state surge current full-sine-wave (see Note 3) ITSM 150 A Peak gate current IGM ±1 A Operating case temperature range TC -40 to +110 °C Storage temperature range Tstg -40 to +125 °C TL 230 °C Full-cycle RMS on-state current at (or below) 60°C case temperature (see Note 2) Lead temperature 1.6 mm from case for 10 seconds A NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1. 2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 60°C derate linearly to 110°C case temperature at the rate of 500 mA/°C. 3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER IDRM MIN TEST CONDITIONS Repetitive peak VD = Rated VDRM off-state current IG = 0 TYP UNIT ±2 TC = 110°C MAX mA Vsupply = +12 V† IH 50 tp(g) > 20 µs -15 -50 current Vsupply = -12 V† RL = 10 Ω tp(g) > 20 µs -16 -50 RL = 10 Ω tp(g) > 20 µs 28 RL = 10 Ω tp(g) > 20 µs 0.7 2 Peak gate trigger Vsupply = +12 V† RL = 10 Ω tp(g) > 20 µs -0.7 -2 voltage Vsupply = -12 V† RL = 10 Ω tp(g) > 20 µs -0.8 -2 Vsupply = -12 V† VTM 7 RL = 10 Ω Vsupply = +12 V† VGTM tp(g) > 20 µs Vsupply = +12 V† Vsupply = -12 V† IGTM RL = 10 Ω Peak gate trigger RL = 10 Ω tp(g) > 20 µs 0.8 2 ITM = ±28.2 A IG = 50 mA (see Note 4) ±1.4 ±1.7 Vsupply = +12 V† IG = 0 Init’ ITM = 100 mA 6 40 Vsupply = -12 V† IG = 0 Init’ ITM = -100 mA -13 -40 Peak on-state voltage Holding current mA V V mA † All voltages are with respect to Main Terminal 1. NOTE 4: This parameter must be measured using pulse techniques, tp = ≤ 1 ms, duty cycle ≤ 2 %. Voltage-sensing contacts separate from the current carrying contacts are located within 3.2 mm from the device body. PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1
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