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部品型式

KM44C4004CS-60

製品説明
仕様・特性

KM44C4004C, KM44C4104C KM44V4004C, KM44V4104C CMOS DRAM 4M x 4Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4.194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref. or 4K Ref.), access time (-5 or -6), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 4Mx4 EDO DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power consumption and high reliability. It may be used as main memory unit for high level computer, microcomputer and personal computer. FEATURES • Extended Data Out Mode operation • Part Identification (Fast Page Mode with Extended Data Out) • CAS-before-RAS refresh capability - KM44C4004C/C-L (5V, 4K Ref.) - KM44C4104C/C-L (5V, 2K Ref.) - KM44V4004C/C-L (3.3V, 4K Ref.) - KM44V4104C/C-L (3.3V, 2K Ref.) • RAS-only and Hidden refresh capability • Self-refresh capability (L-ver only) • Fast parallel test mode capability • TTL(5V)/LVTTL(3.3V) compatible inputs and outputs • Active Power Dissipation • Early Write or output enable controlled write Unit : mW 3.3V Speed • JEDEC Standard pinout 5V • Available in Plastic SOJ and TSOP(II) packages 4K 2K 4K 2K • Single +5V±10% power supply (5V product) -5 324 396 495 605 • Single +3.3V±0.3V power supply (3.3V product) -6 288 360 440 550 FUNCTIONAL BLOCK DIAGRAM • Refresh Cycles VCC C4004C 5V V4004C 3.3V 64ms 5V V4104C Normal 4K C4104C Refresh cycle Refresh period L-ver RAS CAS W Vcc Vss VBB Generator Data in 128ms Refresh Timer 3.3V 2K Control Clocks 32ms Refresh Control Refresh Counter • Performance Range Speed tRAC tCAC tRC tHPC Remark -5 50ns 15ns 84ns 20ns 5V/3.3V -6 60ns 17ns 104ns 25ns A0-A11 (A0 - A10) *1 A0 - A9 (A0 - A10) *1 Buffer Row Decoder Memory Array 4,194,304 x4 Cells Row Address Buffer 5V/3.3V Sense Amps & I/O Part NO. DQ0 to DQ3 Data out Col. Address Buffer Column Decoder Note) *1 : 2K Refresh SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice. Buffer OE

ブランド

SAMSUNG

会社名

Samsung Electronics Co., Ltd

本社国名

韓国

事業概要

DRAM製品、モバイル機器の製造販売メーカー

供給状況

 
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