KM736V747
KM718V847
128Kx36 & 256Kx18 Flow-Through NtRAMTM
Document Title
128Kx36 & 256Kx18-Bit Flow Through NtRAMTM
Revision History
Rev. No.
History
Draft Date
Remark
0.0
1. Initial document.
July. 15. 1998
Preliminary
0.1
1. Changed tCD from 8.0ns to 8.5ns at -8
2. Changed tCYC from 13ns to 12ns at -10
3. Changed DC condition at Icc and parameters
ISB1 ; from 10mA to 30mA,
ISB2 ; from 10mA to 30mA
Oct. 10. 1998
Preliminary
0.2
Add VDDQ Supply voltage( 2.5V I/O )
Dec. 10. 1998
Preliminary
0.3
Changed VOL Max value from 0.2V to 0.4V at 2.5V I/O.
Dec. 23. 1998
Preliminary
1.0
Final spec Release
Jan. 29. 1999
Final
2.0
Remove VDDQ Supply voltage(2.5V I/O)
Feb. 25. 1999
Final
3.0
Add VDDQ Supply voltage(2.5V I/O)
May. 13. 1999
Final
4.0
Change tCD value form 8.5ns to 8.0ns at -8
July. 16. 1999
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
July 1999
Rev 4.0
