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部品型式

K6R4008C1D-KI10

製品説明
仕様・特性

PRELIMINARY CMOS SRAM K6R4008C1D Document Title 512Kx8 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Rev. 0.0 Initial release with Preliminary. September. 7. 2001 Preliminary Rev. 0.1 Change Icc. Isb and Isb1 November, 3. 2001 Preliminary Draft Data Item ICC(Commercial) ICC(Industrial) 10ns 12ns 15ns 10ns 12ns 15ns ISB ISB1(Normal) Previous 90mA 80mA 70mA 115mA 100mA 85mA 30mA 10mA Remark Current 65mA 55mA 45mA 85mA 75mA 65mA 20mA 5mA Rev. 0.2 1. Correct AC parameters : Read & Write Cycle 2. Corrrect Power part : Delete "P-Industrial,Low Power" part 3. Delete Data Retention Characteristics November, 23. 2001 Preliminary Rev. 0.3 1. Delete 15ns speed bin. 2. Change Icc for Industrial mode. Item 10ns ICC(Industrial) 12ns December, 18. 2001 Preliminary July, 09, 2002 Final July. 26, 2004 Final Rev. 1.0 Rev. 2.0 Previous 85mA 75mA Current 75mA 65mA 1. Final datasheet release. 2. Delete 12ns speed bin. 3. Delete UB,LB releated AC characteristics and timing diagram. 4. Correct Read Cycle time waveform(2). 1. Add the Lead Free Package type. The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters. -1- Rev. 2.0 July 2004

ブランド

SAMSUNG

会社名

Samsung Electronics Co., Ltd

本社国名

韓国

事業概要

DRAM製品、モバイル機器の製造販売メーカー

供給状況

 
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