VND10N06/VND10N06-1
VNP10N06FI/K10N06FM
"OMNIFET":
FULLY AUTOPROTECTED POWER MOSFET
TYPE
VND10N06
VND10N06-1
VNP10N06FI
VNK10N06FM
Vclamp
60
60
60
60
V
V
V
V
R DS(on)
0.3
0.3
0.3
0.3
Ω
Ω
Ω
Ω
I lim
10
10
10
10
A
A
A
A
3
s
s
s
s
s
s
s
s
s
LINEAR CURRENT LIMITATION
THERMAL SHUT DOWN
SHORT CIRCUIT PROTECTION
INTEGRATED CLAMP
LOW CURRENT DRAWN FROM INPUT PIN
LOGIC LEVEL INPUT THRESHOLD
ESD PROTECTION
SCHMITT TRIGGER ON INPUT
HIGH NOISE IMMUNITY
DESCRIPTION
The VND10N06, VND10N06-1, VNP10N06FI and
VNK10N06FM are monolithic devices made
using SGS-THOMSON Vertical Intelligent Power
M0 Technology, intended for replacement of
standard power MOSFETS in DC to 50 KHz
applications. Built-in thermal shut-down, linear
current limitation and overvoltage clamp protect
the chip in harsh enviroments.
3
2
1
1
IPAK
TO-251
DPAK
TO-252
3
1
ISOWATT220
2
SOT82-FM
BLOCK DIAGRAM (*)
(∗) SOT82-FM Pin Configuration: INPUT = 3; SOURCE = 1; DRAIN = 2.
October 1997
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