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MP4508
MP4508 TOSHIBA Power Transistor Module Silicon PNP Triple Diffused Type (Four Darlington Power Transistors in One) MP4508 Industrial Applications High Power Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching • Package with heat sink isolated to lead (SIP 12 pins) • High collector power dissipation (4-device operation) • High collector current: IC (DC) = −5 A (max) • Unit: mm High DC current gain: hFE = 1000 (min) (VCE = −3 V, IC = −3 A) : PT = 5 W (Ta = 25°C) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −100 V Collector-emitter voltage VCEO −100 V Emitter-base voltage VEBO −5 V DC IC −5 Pulse ICP −8 IB PC Collector current Continuous base current Collector power dissipation (1-device operation) Collector power dissipation (4-device operation) A JEITA ― A TOSHIBA 3.0 Tc = 25°C ― −0.1 Ta = 25°C JEDEC W 2-32B1B Weight: 6.0 g (typ.) 5.0 W PT 25 Isolation voltage VIsol 150 °C Tstg Storage temperature range V Tj Junction temperature 1000 −55 to 150 °C Array Configuration R1 R2 3 1 6 5 2 7 12 8 4 10 9 11 R1 ≈ 5 kΩ, R2 ≈ 120 Ω 1 2004-07-01
TOSHIBA
株式会社 東芝セミコンダクター＆ストレージ社
日本
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