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BUT90
BUT90 ® HIGH POWER NPN SILICON TRANSISTOR s s s s s NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED HIGH RUGGEDNESS LOW COLLECTOR EMITTER SATURATION APPLICATIONS UNINTERRUPTABLE POWER SUPPLY s MOTOR CONTROL s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT s 1 2 DESCRIPTION The BUT90 is a Multiepitaxial Planar NPN Transistor in TO-3 package. It is intended for use in high frequency and efficency converters, switching regulators and motor control. TO-3 (version "S") INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CEV Collector-Emitter Voltage (V BE = -1.5 V) 200 V V CEO Collector-Emitter Voltage (I B = 0) 125 V V EBO Emitter-Base Voltage (I C = 0) 10 V Collector Current 50 A 120 A 12 A 32 A IC I CM IB Collector Peak Current (t p = 10 ms) Base Current I BM Base Peak Current P tot Total Power Dissipation at T case ≤ 25 C T stg Storage Temperature Tj (t p = 10 ms) o Max Operating Junction Temperature February 2003 250 W -65 to 200 o C 200 o C 1/4
SAMSUNG
Samsung Electronics Co., Ltd
韓国
DRAM製品、モバイル機器の製造販売メーカー
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