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LNJ308G8TRA
This product complies with the RoHS Directive (EU 2002/95/EC). Light Emitting Diodes LNJ308G8TRA Surface Mounting Chip LED SS Type Absolute Maximum Ratings Ta = 25°C Parameter Lighting Color Symbol Rating PD 50 mW Forward current IF 20 mA Pulse forward current * IFP 100 mA Reverse voltage VR 4 V Operating ambient temperature Topr Storage temperature Tstg Yellow Green Unit d pla inc Pl ea ne lud se pla m d m es vis ne ain ain foll htt it d te t o p:/ fo llo dis disc nan enan wing /w ww win con on ce ce fo .se g U tin tin typ ty ur mi RL ued ued e pe Pro co a du Relative luminous intensity (%) ty n.p bo pe type ct life d an ut cy as lat cle on es ic. t in sta co fo ge .jp rm . /en ati on . M Di ain sc te on na tin nc ue e/ d Power dissipation –25 to +85 °C –40 to +100 °C Note) *: The condition of IFP is duty 10%, Pulse width 1 msec. Electro-Optical Characteristics Ta = 25°C Parameter Symbol Luminous intensity IO Reverse current IR Forward voltage VF Peak emission wavelength λP Spectral half band width Δλ Typ 2.25 Max 5.0 VR = 4 V Unit mcd 10 µA 2.6 V IF = 10 mA 2.03 IF = 10 mA 565 nm IF = 10 mA 30 nm IF VF Relative luminous intensity Ta ue 1 000 ce /D isc on tin Forward current IF (mA) 10 10 int en an 1 0.1 1 10 100 1 100 Forward current IF (mA) 1.6 1.8 2.0 2.2 10 −20 2.4 Forward voltage VF (V) Relative luminous intensity λP Directive characteristics 80 30° 0° 10° 20° 10° 20° 40° 60 50° 700 800 Peak emission wavelength λP (nm) Publication date: December 2008 90° 100 60° 40° 70° 20° 80° 600 50° 60° 70° 0 500 30° 40° 80° 60° 20 20 80 60 40 20 0 40 60 80 100 IF Ta 25 100 40 0 Ambient temperature Ta (°C) Forward current IF (mA) Relative luminous intensity (%) Min IF = 10 mA 100 Ma Luminous intensity IO (mcd) IO IF Conditions 20 15 10 5 80° 20 40 60 Relative luminous intensity (%) SHD00417BEK 80 90° 100 0 0 20 40 60 80 100 Ambient temperature Ta (°C) 1
PANASONIC
パナソニック株式会社
日本
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