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BDX69A
isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor BDX69/A/B/C DESCRIPTION ·High DC Current Gain: hFE= 1000(Min)@ IC= 20A ·Low Saturation Voltage ·Complement to Type BDX68/A/B/C APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDX69 80 BDX69A 100 BDX69B VCBO 120 Collector-Base Voltage scs .i w 140 BDX69 60 w w BDX69A 80 BDX69B 100 BDX69C VEBO .cn mi e V BDX69C VCEO UNIT 120 Collector-Emitter Voltage V Emitter-Base Voltage 5 V IC Collector Current-Continuous 25 A ICM Collector Current-Peak 40 A IB Base Current 500 mA PC Collector Power Dissipation @ TC=25℃ 150 W TJ Junction Temperature 200 ℃ -65~200 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case isc Website：www.iscsemi.cn MAX UNIT 0.875 ℃/W
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