TECHNICAL DATA
PNP SWITCHING SILICON TRANSISTOR
Qualified per MIL-PRF-19500/350
Devices
Qualified Level
2N3867
2N3867S
JAN
JANTX
JANTXV
2N3868
2N3868S
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current -- Continuous
Total Power Dissipation
@ TA = 250C(1)
@ TC = 250C(2)
Operating & Storage Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PT
TOP, TSTG
2N3867
2N3867S
2N3868
2N3868S
40
40
60
60
4.0
3.0
1.0
10
-55 to +200
Unit
Vdc
Vdc
Vdc
Adc
W
W
0
C
TO-5*
2N3867, 2N3868
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 5.71 mW/0C for TA > +250C
2) Derate linearly 57.1 mW/0C for TC > +250C
Symbol
RθJC
Max.
17.5
Unit
C/W
TO-39*
(TO-205AD)
2N3867S, 2N3868S
0
*See Appendix A for
Package Outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
2N3867, S
2N3868, S
V(BR)CBO
40
60
Vdc
2N3867, S
2N3868, S
V(BR)CEO
40
60
Vdc
V(BR)EBO
4.0
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
IC = 100 µAdc
Collector-Emitter Breakdown Voltage
IC = 20 mAdc
Emitter-Base Breakdown Voltage
IE = 100 µAdc
Collector-Emitter Cutoff Current
VEB = 2.0 Vdc, VCE = 40 Vdc
VEB = 2.0 Vdc, VCE = 60 Vdc
Collector-Base Cutoff Current
VCB = 40 Vdc
VCB = 60 Vdc
Emitter-Base Cutoff Current
VEB = 4 Vdc
Vdc
µAdc
2N3867, S
2N3868, S
ICEX
1.0
1.0
2N3867, S
2N3868, S
ICBO
100
µAdc
IEBO
100
µAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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