IRFP450B
500V N-Channel MOSFET
General Description
Features
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies,
power factor correction and electronic lamp ballasts based
on half bridge.
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14A, 500V, RDS(on) = 0.39Ω @VGS = 10 V
Low gate charge ( typical 87 nC)
Low Crss ( typical 60 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
D
!
●
◀
G!
!
TO-3PN
G DS
Absolute Maximum Ratings
Symbol
VDSS
ID
▲
●
●
S
IRFP Series
TC = 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (TC = 25°C)
Drain Current
IRFP450B
500
Units
V
14
A
8.8
A
56
- Continuous (TC = 100°C)
A
IDM
Drain Current
VGSS
Gate-Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
IAR
Avalanche Current
(Note 1)
14
A
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
(Note 1)
20.5
5.5
205
1.64
-55 to +150
mJ
V/ns
W
W/°C
°C
300
°C
dv/dt
PD
TJ, TSTG
TL
- Pulsed
(Note 1)
± 30
(Note 3)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
V
990
mJ
Thermal Characteristics
Symbol
RθJC
Parameter
Thermal Resistance, Junction-to-Case
Typ
--
RθCS
Thermal Resistance, Case-to-Sink
RθJA
Thermal Resistance, Junction-to-Ambient
©2001 Fairchild Semiconductor Corporation
Max
0.61
Units
°C/W
0.24
--
°C/W
--
40
°C/W
Rev. B, November 2001
IRFP450B
November 2001
