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PH3075L,115
PH3075L N-channel TrenchMOS logic level FET Rev. 02 — 23 February 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Low conduction losses due to low on-state resistance Suitable for thermally demanding environments due to 175 °C rating Suitable for logic level gate drive sources 1.3 Applications DC motor control General purpose power switching DC-to-DC convertors 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 75 V ID drain current Tmb = 25 °C; VGS = 5 V; see Figure 1; see Figure 3 - - 30 A Ptot total power dissipation Tmb = 25 °C; see Figure 2 - - 75 W VGS = 5 V; ID = 25 A; VDS = 60 V; Tj = 25 °C; see Figure 11 - 9 - nC VGS = 10 V; ID = 15 A; Tj = 25 °C; see Figure 9; see Figure 10 - 23 28 mΩ Dynamic characteristics QGD gate-drain charge Static characteristics RDSon drain-source on-state resistance
NXP
NXP Semiconductors
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