MITSUBISHI SEMICONDUCTOR
MITSUBISHI SEMICONDUCTOR
PS21661-RZ/FR
PS21661-RZ/FR
TRANSFER-MOLD TYPE
TRANSFER-MOLD TYPE
INSULATED TYPE
INSULATED TYPE
PS21661-RZ
PS21661-FR
INTEGRATED POWER FUNCTIONS
• 600V/3A low-loss 5th generation IGBT inverter bridge for 3
phase DC-to-AC power conversion.
INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS
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For upper-leg IGBTS :Drive circuit, High voltage isolated high-speed level shifting, Control circuit under-voltage protection (UV).
For lower-leg IGBTS : Drive circuit, Control circuit under-voltage protection (UV), Short circuit protection (SC).
Fault signaling : Corresponding to an SC fault (Lower-side IGBT) or a UV fault (Lower-side supply).
Input interface : 5V line CMOS/TTL compatible Schmitt Trigger receiver circuit (Active high),
Arm-short-through interlock protection.
APPLICATION
AC100V~200V, three-phase inverter drive for small power motor control.
Fig. 1 PS21661-RZ PACKAGE OUTLINES
Dimensions in mm
q~#5 : pins numbers. The terminals array, please reference
to the Fig.5.
Mar. 2004
