MOTOROLA
Order this document
by MRF21045/D
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
MRF21045R3
MRF21045LR3
MRF21045SR3
MRF21045LSR3
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for W-CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
• Typical 2-carrier W-CDMA Performance for VDD = 28 Volts, IDQ = 500 mA,
f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz,
Adjacent Channels measured over 3.84 MHz Bandwidth at f1 -5 MHz
and f2 +5 MHz, Distortion Products measured over a 3.84 MHz Bandwidth
at f1 -10 MHz and f2 +10 MHz, Peak/Avg. = 8.3 dB @ 0.01% Probability
on CCDF.
Output Power — 10 Watts Avg.
Efficiency — 23.5%
Gain — 15 dB
IM3 — -37.5 dBc
ACPR — -41 dBc
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2170 MHz, 45 Watts CW
Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.
• Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal.
2170 MHz, 45 W, 28 V
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 465E-04, STYLE 1
NI-400
MRF21045R3, LR3
CASE 465F-04, STYLE 1
NI-400S
MRF21045SR3, LSR3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
65
Vdc
Gate-Source Voltage
VGS
-0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
105
0.60
Watts
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M2 (Minimum)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
Max
Unit
RθJC
1.65
°C/W
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 8
MOTOROLA RF
Motorola, Inc. 2003 DEVICE DATA
MRF21045R3 MRF21045LR3 MRF21045SR3 MRF21045LSR3
1