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2SB0792ASL

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This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SB0792 (2SB792), 2SB0792A (2SB792A) Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Unit: mm ■ Features 0.40+0.10 –0.05 • High collector-emitter voltage (Base open) VCEO • Low noise voltage NV • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing 0.16+0.10 –0.06 (0.95) (0.95) Rating Unit VCBO −150 V −185 ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo em u ic t la on te /e st -in in de for x. ma ht t m ion l . 2SB0792A VCEO Emitter-base voltage (Collector open) VEBO −150 V −185 −5 V IC mA 200 mW Tj 150 °C Tstg Storage temperature mA −100 PC Junction temperature −50 ICP Collector power dissipation 0 to 0.1 Collector-emitter voltage 2SB0792 (Base open) 2SB0792A Peak collector current 10˚ 1.1+0.2 –0.1 Symbol 2SB0792 Collector current 5˚ 2.90+0.20 –0.05 1.1+0.3 –0.1 Parameter Collector-base voltage (Emitter open) 1.9±0.1 (0.65) 2 1 ■ Absolute Maximum Ratings Ta = 25°C 0.4±0.2 2.8+0.2 –0.3 M Di ain sc te on na tin nc ue e/ d 1.50+0.25 –0.05 3 −55 to +150 1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package °C Marking Symbol: • 2SB0792: I • 2SB0792A: 2F ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Symbol 2SB0792 VCEO Conditions IC = −100 µA, IB = 0 Min Typ −150 VEBO IE = −10 µA, IC = 0 Collector-base cutoff current (Emitter open) ICBO VCB = −100 V, IE = 0 −5 2SB0792 hFE VCE = −5 V, IC = −10 mA Transition frequency V fT µA 130 450  130 VCE(sat) 330 IC = −30 mA, IB = −3 mA VCB = −10 V, IE = 10 mA, f = 200 MHz Collector output capacitance (Common base, input open circuited) Cob VCB = −10 V, IE = 0, f = 1 MHz Noise voltage NV VCE = −10 V, IC = −1 mA, GV = 80 dB Rg = 100 kΩ, Function = FLAT Pl V −1 2SB0792A Collector-emitter saturation voltage Unit −185 2SB0792A Emitter-base voltage (Collector open) Forward current transfer ratio * Max −1 V 200 MHz 4 pF 150 mV Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank R S T hFE 130 to 220 185 to 330 260 to 450 Marking symbol 2SB0792 2SB0792A IR IS IT 2FR 2FS  Note) The part numbers in the parenthesis show conventional part number. Publication date: March 2003 SJC00058BED 1

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