2SC5065
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5065
VHF~UHF Band Low Noise Amplifier Applications
•
Low noise figure, high gain.
•
Unit: mm
NF = 1.1dB, |S21e|2 = 12dB (f = 1 GHz)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
20
V
Collector-emitter voltage
VCEO
12
V
Emitter-base voltage
VEBO
3
V
Base current
IB
15
mA
Collector current
IC
30
mA
Collector power dissipation
PC
100
mW
Junction temperature
Storage temperature range
Tj
125
°C
Tstg
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
JEDEC
―
JEITA
SC-70
TOSHIBA
2-3E1A
Weight: 0.006 g (typ.)
Microwave Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
GHz
Insertion gain
Noise figure
VCE = 5 V, IC = 10 mA
5
7
⎯
2
Transition frequency
VCE = 5 V, IC = 10 mA, f = 500 MHz
⎯
17
⎯
2
VCE = 5 V, IC = 10 mA, f = 1 GHz
8.5
12
⎯
NF (1)
VCE = 5 V, IC = 3 mA, f = 500 MHz
⎯
1
⎯
NF (2)
VCE = 5 V, IC = 3 mA, f = 1 GHz
⎯
1.1
2.0
Min
Typ.
Max
Unit
fT
⎪S21e⎪ (1)
⎪S21e⎪ (2)
dB
dB
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
ICBO
VCB = 10 V, IE = 0
⎯
⎯
1
μA
Emitter cut-off current
IEBO
VEB = 1 V, IC = 0
⎯
⎯
1
μA
VCE = 5 V, IC = 10 mA
80
⎯
240
⎯
0.7
⎯
pF
⎯
0.45
0.9
pF
DC current gain
hFE
(Note 1)
Output capacitance
Cob
Reverse transfer capacitance
Cre
VCB = 5 V, IE = 0, f = 1 MHz
(Note 2)
Note 1: hFE classification O: 80~160, Y: 120~240
Note 2: Cre is measured by 3 terminal method with capacitance bridge.
1
2007-11-01
