SSM3K05FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K05FU
High Speed Switching Applications
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•
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Small package
Low on resistance : Ron = 0.8 Ω max (@VGS = 4 V)
: Ron = 1.2 Ω max (@VGS = 2.5 V)
Low gate threshold voltage
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Rating
Unit
20
V
V
VGSS
±12
DC
ID
400
Pulse
IDP
800
Gate-source voltage
Drain current
Symbol
VDS
Drain-source voltage
Drain power dissipation (Ta = 25°C)
PD
(Note 1)
mA
150
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: Mounted on FR4 board.
(25.4 mm × 25.4 mm × 1.6 t, Cu pad: 0.6 mm2 × 3)
Marking
JEDEC
―
JEITA
SC-70
TOSHIBA
2-2E1E
Weight: 0.006 g (typ.)
Equivalent Circuit
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
1
2007-11-01