2SK882
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK882
FM Tuner, VHF RF Amplifier Applications
Unit: mm
•
Low reverse transfer capacitance: Crss = 0.025 pF (typ.)
•
Low noise figure: NF = 1.7dB (typ.)
•
High power gain: Gps = 28dB (typ.)
•
Recommend operation voltage: 5~15 V
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDS
20
V
Gate-source voltage
VGS
±5
V
Drain current
ID
30
mA
Drain power dissipation
PD
100
mW
Channel temperature
Tch
125
°C
Storage temperature
Tstg
−55~125
°C
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high
JEITA
SC-70
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-2E1C
reliability significantly even if the operating conditions (i.e.
Weight: 0.006 g (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VDS = 0, VGS = ±5 V
⎯
⎯
±50
nA
Drain-source voltage
VDSX
VGS = −4 V, ID = 100 μA
20
⎯
⎯
V
VDS = 10 V, VGS = 0
3
⎯
14
mA
VDS = 10 V, ID = 100 μA
⎯
⎯
−2.5
V
VDS = 10 V, VGS = 0, f = 1 kHz
⎯
10
⎯
mS
⎯
3.0
4.3
pF
⎯
0.025
0.04
pF
20
28
⎯
dB
⎯
1.7
3.0
dB
Drain current
IDSS
(Note)
Gate-source cut-off voltage
VGS (OFF)
Forward transfer admittance
⎪Yfs⎪
Input capacitance
Ciss
Reverse transfer capacitance
Crss
Power gain
Gps
Noise figure
NF
VDS = 10 V, VGS = 0, f = 1 MHz
VDS = 10 V, f = 100 MHz (Figure 1)
Note: IDSS classification Y: 3.0~7.0 mA, GR: 6.0~14.0 mA
1
2007-11-01
