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部品型式

MT41K256M8DA-125:K

製品説明
仕様・特性

2Gb: x4, x8, x16 DDR3L SDRAM Description DDR3L SDRAM MT41K512M4 – 64 Meg x 4 x 8 banks MT41K256M8 – 32 Meg x 8 x 8 banks MT41K128M16 – 16 Meg x 16 x 8 banks • • • • Description The 1.35V DDR3L SDRAM device is a low-voltage version of the 1.5V DDR3 SDRAM device. Refer to the DDR3 (1.5V) SDRAM data sheet specifications when running in 1.5V compatible mode. Options • • • • • • • • Marking • Configuration – 512 Meg x 4 – 256 Meg x 8 – 128 Meg x 16 • FBGA package (Pb-free) – x4, x8 – 78-ball (8mm x 10.5mm x 1.2mm) Rev. K • FBGA package (Pb-free) – x16 – 96-ball (8mm x 14mm x 1.2mm) Rev. K • Timing – cycle time – 1.07ns @ CL = 13 (DDR3-1866) – 1.25ns @ CL = 11 (DDR3-1600) – 1.5ns @ CL = 9 (DDR3-1333) – 1.875ns @ CL = 7 (DDR3-1066) • Operating temperature – Commercial (0°C ≤ T C ≤ +95°C) – Industrial (–40°C ≤ T C ≤ +95°C) • Revision Features • • • • • • • Automatic self refresh (ASR) Write leveling Multipurpose register Output driver calibration VDD = V DDQ = 1.35V (1.283–1.45V) Backward-compatible to V DD = V DDQ = 1.5V ±0.075V Differential bidirectional data strobe 8n-bit prefetch architecture Differential clock inputs (CK, CK#) 8 internal banks Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals Programmable CAS (READ) latency (CL) Programmable posted CAS additive latency (AL) Programmable CAS (WRITE) latency (CWL) Fixed burst length (BL) of 8 and burst chop (BC) of 4 (via the mode register set [MRS]) Selectable BC4 or BL8 on-the-fly (OTF) Self refresh mode TC of 95°C – 64ms, 8192-cycle refresh up to 85°C – 32ms, 8192-cycle refresh at >85°C to 95°C Self refresh temperature (SRT) 512M4 256M8 128M16 DA JT -107 -125 -15E -187E None IT :K Table 1: Key Timing Parameters Speed Grade Data Rate (MT/s) Target tRCD-tRP-CL -1071, 2, 3 1866 13-13-13 13.91 13.91 13.91 -1251, 2 1600 11-11-11 13.75 13.75 13.75 -15E1 1333 9-9-9 13.5 13.5 13.5 -187E 1066 7-7-7 13.1 13.1 13.1 Notes: tRCD (ns) tRP (ns) CL (ns) 1. Backward compatible to 1066, CL = 7 (-187E). 2. Backward compatible to 1333, CL = 9 (-15E). 3. Backward compatible to 1600, CL = 11 (-125). 09005aef83ed2952 2Gb_DDR3L.pdf - Rev. N 07/16 EN 1 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2015 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.

ブランド

MICRON

会社名

Micron Technology

本社国名

U.S.A

事業概要

メモリ・ストレージ用の各種半導体メモリ(DRAMやフラッシュメモリとそれらの搭載製品群)を製造・販売している。主力製品は、DRAM, FLASH MEMORY

供給状況

 
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